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DE275X2-102N06A

1000V 16A RF Power MOSFET 1180W , 800mO DE275X2

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DE275X2-102N06A Ixys
DE275X2-102N06A Ixys
pcs
ID Code:137520
Manufacturer:Ixys
Price with VAT : 58,957913 €
Price without VAT : 48,725548 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DE275X2-102N06A
Central warehouse: 0 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 48,725548 €58,957913 €
6 + 43,469670 €52,598301 €
15 + 42,165580 €51,020352 €
30 + 39,517882 €47,816637 €
1000V 16A RF Power MOSFET 1180W , 800mO DE275X2

Basic information:

Marking manufacturerDE275X2-102N06A 
Type of component:FET Tranzistor 
KategorieFET N-Channel 
Configuration:Single 2*(T-BD) 
Specification:Enhancement Mode 
Construction:2*FET-BD 
Number of circuits (in case) 2 ks
Case type:THT 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:0.099 [g]
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1000 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Pmax with heatsink (TC=25°C)750 [W]
Pmax without heatsink ( TA=25°C)[W]
Input Logic Level (UGS level)15V 
RDS (on) 10V (UGS=10÷15V)1600 [mΩ]
trr recovery time (If=Inom.,@25°C)200 [ns]
Qg (Total Gate Charge)50 [nC]
Cin (Input Capacitance)1800 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.25 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

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