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DIM1200FSM12-A000

IGBT 1200V / 1200A Single

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DIM1200FSM12-A000 Dynex Semiconductor
DIM1200FSM12-A000 Dynex Semiconductor
DIM1200FSM12-A000 Dynex Semiconductor
pcs
ID Code:136233
Manufacturer:Dynex Semiconductor
Price with VAT : 951,895340 €
Price without VAT : 786,690363 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM1200FSM12-A000
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 786,690363 €951,895339 €
3 + 767,022117 €928,096762 €
6 + 727,685624 €880,499605 €
12 + 668,680885 €809,103871 €
IGBT 1200V / 1200A Single

Basic information:

Marking manufacturerDIM1200FSM12-A000 
KategorieIGBT Full Silicon 
Configuration:single-E2*(T+D) 
Construction:2*(IGBT+D) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :MODUL-F 
Type of material:Si-Silicon 
Material BaseALSiC 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:1262 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)1200 [A]
Idc max (Tc/Ta=80÷89°C)1200 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)1.9 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.2 [V]
I2t (TC/TA=25°C)400000 [A2s]
Pmax with heatsink (TC=25°C)10400 [W]
tr (Turn-on / rise time)200 [ns]
tf/tq (Turn-off / fall time)180 [ns]
Qg (Total Gate Charge)12000 [nC]
Cin (Input Capacitance)135000 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:130x140x38 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.012 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 130 [mm]
W - Width 140 [mm]
H - Height 38 [mm]

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