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HGTP5N120BND

Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220 Tube, obsolete

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HGTP5N120BND ON Semiconductor (Farchild)
HGTP5N120BND ON Semiconductor (Farchild)
HGTP5N120BND ON Semiconductor (Farchild)
HGTP5N120BND ON Semiconductor (Farchild)
pcs
ID Code:140410
Manufacturer:ON Semiconductor (Farchild)
Price with VAT : 2,390832 €
Price without VAT : 1,975894 €
VAT:21 %
Availability:In stock
Total stock:545 pcs
Marking manufacturer: HGTP5N120BND
Central warehouse: 545 pcs
Factory Lead Time: Obsolete
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 1,975894 €2,390832 €
5 + 1,786208 €2,161312 €
10 + 1,687414 €2,041771 €
25 + 1,588619 €1,922229 €
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220 Tube, obsolete

Basic information:

Marking manufacturerHGTP5N120BND 
Factory Lead TimeObsolete [wk]
KategorieIGBT Full Silicon 
Configuration:single 1*(T+D) 
Construction:1*(IGBT+D) 
Number of circuits (in case) 1 ks
Case type:THT 
Case [inch] :TO-220AB 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:2.4 [g]
Type of packaging:TUBE 
Small package (Number of units):50 

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)21 [A]
IF(AV) (Tc/Ta=100÷119°C)10 [A]
UF (maximum forward voltage)2.7 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.45 [V]
Pmax with heatsink (TC=25°C)167 [W]
trr recovery time (If=Inom.,@25°C)65 [ns]
tr (Turn-on / rise time)15 [ns]
tf/tq (Turn-off / fall time)175 [ns]
Qg (Total Gate Charge)53 [nC]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:TO-220 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.75 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

RM - Pitch pins2.5 [mm]
Number of Pins
L - Length 15 [mm]
L1 - Length 6.5 [mm]
W - Width 10 [mm]
H - Height [mm]
Dimensions of outlets[mm]
Lv - Length of outlets12.7 [mm]

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