NPN Darlington bipolar transistor
Basic information:
Marking manufacturer | QM30DY-H |
Factory Lead Time | Obsolete [wk] |
Type of component: | Transistor Bipolar NPN |
Kategorie | Bipolar NPN Darlington |
Configuration: | Half Bridge |
Case type: | Modul |
Type of material: | Si-Silicon |
RoHS | No |
REACH | No |
NOVINKA | N |
Packaging and weight:
Unit: | pcs |
Weight: | 237.6 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 8 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 30 [A] |
Uisol (@25°C/1min/50Hz) | 2500 [V] |
UCE (sat) (@25°C) | 2.5 [V] |
Pmax with heatsink (TC=25°C) | 250 [W] |
trr recovery time (If=Inom.,@25°C) | 3000 [ns] |
hFE current gain (max./typ.) | 75÷ |
Thermal and mechanical parameters:
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
Rth-c (thermal resistance) | 0.015 [°C/W] ?Rth-c - definitions for different components
Rth-c = Rthjc per whole case
Rth-c - foil surface inch2 |