Trans IGBT Module 1200V 126A
Basic information:
Marking manufacturer | SK100GH12T4T |
Kategorie | IGBT Full Silicon |
Configuration: | Bridge 1f |
Construction: | 4*(IGBT+D) |
Number of circuits (in case) | 4 ks |
Case type: | Modul |
Case [inch] : | SEMITOP-4 |
Type of material: | Si-Silicon |
Material Base | Ceramic |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 60 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 6 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 126 [A] |
Idc max (Tc/Ta=70÷79°C) | 100 [A] |
Uisol (@25°C/1min/50Hz) | 2500 [V] |
UF (maximum forward voltage) | 2.2 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 1.8 [V] |
tr (Turn-on / rise time) | 65 [ns] |
tf/tq (Turn-off / fall time) | 80 [ns] |
Qg (Total Gate Charge) | 750 [nC] |
Cin (Input Capacitance) | 5540 [pF] |
Thermal and mechanical parameters:
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 125 [°C] |
Rth-c (thermal resistance) | 0.43 [°C/W] ?Rth-c - definitions for different components
Rth-c = Rthjc per whole case
Rth-c - foil surface inch2 |
L - Length | 55 [mm] |
W - Width | 60 [mm] |
H - Height | 15 [mm] |
Alternatives and replacements
Alternative products 1: | F4-75R12KS4 |
Alternative products 2: | F4-150R12KS4 |