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SKIIP603GD123-3DUL

1200V 627A/25°C Trench IGBT ,1200V 627A/25°C Trench IGBT

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SKIIP603GD123-3DUL Semikron
SKIIP603GD123-3DUL Semikron
No longer in stock
ID Code:172130
Manufacturer:Semikron
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: SKiiP603GD123-3DUL
Unit:: pcs
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Quantity (pcs)Price without VATPrice with VAT
1200V 627A/25°C Trench IGBT ,1200V 627A/25°C Trench IGBT

Basic information:

Marking manufacturerSKiiP603GD123-3DUL 
KategorieIGBT IPM-Inteligent 
Configuration:Bridge 3f 
Construction:6*(IGBT+D) 
Number of circuits (in case) 6 ks
Case type:Modul 
Case [inch] :SKiiP3-GD 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:11100 [g]
Type of packaging:BOX 
Small package (Number of units):10 

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)627 [A]
Idc max (Tc/Ta=70÷79°C)484 [A]
Uisol (@25°C/1min/50Hz)4300 [V]
UF (maximum forward voltage)1.5 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)1.7 [V]
du/dt (critical rate of rise of on-state voltage)75000 [V/µs]
I2t (TC/TA=25°C)61000 [A2s]
Cin (Input Capacitance)1000 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.031 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

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