Trans IGBT Module N-CH 600V 230A 730000mW 7-Pin 34MM-1 Tray
Basic information:
Marking manufacturer | BSM200GB60DLC |
Kategorie | IGBT Full Silicon |
Configuration: | Half Bridge 1*(Phase Leg) |
Construction: | 2*(IGBT+D) |
Number of circuits (in case) | 2 ks |
Case type: | Modul |
Case [inch] : | SEMITRANS-2 |
Type of material: | Si-Silicon |
Material Base | Cu |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 160.986 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 10 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 230 [A] |
Uisol (@25°C/1min/50Hz) | 2500 [V] |
UF (maximum forward voltage) | 1.25 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 1.95 [V] |
I2t (TC/TA=25°C) | 4050 [A2s] |
Pmax with heatsink (TC=25°C) | 730 [W] |
Esw (125°C) | 22 [mJ] |
tr (Turn-on / rise time) | 43 [ns] |
tf/tq (Turn-off / fall time) | 33 [ns] |
Cin (Input Capacitance) | 9000 [pF] |
Thermal and mechanical parameters:
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
Rth-c (thermal resistance) | 0.17 [°C/W] ?Rth-c - definitions for different components
Rth-c = Rthjc per whole case
Rth-c - foil surface inch2 |
L - Length | 94 [mm] |
W - Width | 34 [mm] |
H - Height | 30 [mm] |
Alternatives and replacements
Alternative 1: | 137151 - SKM195GB066D (SMK) |