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DAMJ11N650D

MOSFET 650V / 11A, 0,38 ohm, TO-252

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DAMJ11N650D Daco Semiconductor
DAMJ11N650D Daco Semiconductor
DAMJ11N650D Daco Semiconductor
DAMJ11N650D Daco Semiconductor
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ID Code:179017
Manufacturer:Daco Semiconductor
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DAMJ11N650D
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MOSFET 650V / 11A, 0,38 ohm, TO-252

Basic information:

Marking manufacturerDAMJ11N650D 
Type of component:FET Tranzistor 
KategorieFET N-Channel 
Configuration:Single 1*(T-BD) 
Specification:Enhancement Mode 
Construction:1*FET-BD 
Number of circuits (in case) 1 ks
Case type:SMD 
Case [inch] :DPAK 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:0.36 [g]
Type of packaging:TUBE 
Small package (Number of units):50 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 650 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)6.7 [A]
UF (maximum forward voltage)1.4 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)83 [W]
Input Logic Level (UGS level)10V 
RDS (on) 10V (UGS=10÷15V)380 [mΩ]
tr (Turn-on / rise time)28 [ns]
tf/tq (Turn-off / fall time)[ns]
Qg (Total Gate Charge)13 [nC]
Cin (Input Capacitance)690 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 1.5 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 6.5 [mm]
W - Width 2.3 [mm]
H - Height 6.1 [mm]

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