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Bypass Thyristor 4500V/2900A for the protection of IGBT modules in VSC multi-level applications

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ACR2900VR45 Dynex Semiconductor
ACR2900VR45 Dynex Semiconductor
ID Code:183763
Manufacturer:Dynex Semiconductor
Price with VAT : 873,6784 €
Price without VAT : 722,0483 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: ACR2900VR45
Central warehouse Zdice: 0 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 722,0483 €873,6784 €
3 + 703,9971 €851,8364 €
The Dynex Bypass Thyristor range of devices is specially designed for the protection of IGBT modules in Voltage Source Converter multi-level applications, where a reduced forward blocking voltage is required. Very Low Cosmic Ray FIT Rating, High Surge Capability, High dv/dt Rating
The primary characteristic of the bypass thyristor which determines current diversion from the IGBT diode is dynamic on-state voltage, with overall turn-on time a secondary influence. Highly optimised, Low FIT, low Vt, 3.3kV and 4.5kV bypass thyristor devices have been produced for VSC protection.
Voltage Source Converter (VSC) technology provides a number of advantages over traditional (LCC) HVDC including self-commutation, small footprint, and black start capability and is becoming increasingly popular in applications such as offshore wind.With higher voltage systems, where the current handling capability of the IGBT diode is reduced, effective current diversion becomes essential.

Basic information:

Marking manufacturerACR2900VR45 
Type of casing:PUK 
KategorieTrisil-Overvoltage Protection 
Type of component:TRISIL 

Electrical parameters:

Udc (URRM, UCEO, Umax) 4500 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)2900 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=60÷69°C)2900 [A]
du/dt (critical rate of rise of on-state voltage)10000 [V/µs]
di/dt (critical rate of rise of on-state current)400 [A/µs]
I2t (TC/TA=25°C)7600 [1000*A2s]
tf/tq (Turn-off / fall time)3000 [ns]

Material, color, design:

Type of material:!_si-silicon_! 

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.00746 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Fmin:48000 [N]
Fmax:59000 [N]


Dimensions of outlets0.00 [mm]

Packaging and weight:

Weight:1100 [g]
Packaging (Number of units):

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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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