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ACR3200VR33

Bypass Thyristor 3300V/3200A for the protection of IGBT modules in VSC multi-level applications

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ACR3200VR33 Dynex Semiconductor
ACR3200VR33 Dynex Semiconductor
ACR3200VR33 Dynex Semiconductor
pcs
ID Code:183764
Manufacturer:Dynex Semiconductor
Price with VAT : 936,650869 €
Price without VAT : 774,091627 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: ACR3200VR33
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 774,091627 €936,650869 €
3 + 754,739336 €913,234597 €
6 + 716,034755 €866,402054 €
12 + 657,977883 €796,153238 €
The Dynex Bypass Thyristor range of devices is specially designed for the protection of IGBT modules in Voltage Source Converter multi-level applications, where a reduced forward blocking voltage is required. Very Low Cosmic Ray FIT Rating, High Surge Capability, High dv/dt Rating
The primary characteristic of the bypass thyristor which determines current diversion from the IGBT diode is dynamic on-state voltage, with overall turn-on time a secondary influence. Highly optimised, Low FIT, low Vt, 3.3kV and 4.5kV bypass thyristor devices have been produced for VSC protection.
Voltage Source Converter (VSC) technology provides a number of advantages over traditional (LCC) HVDC including self-commutation, small footprint, and black start capability and is becoming increasingly popular in applications such as offshore wind.With higher voltage systems, where the current handling capability of the IGBT diode is reduced, effective current diversion becomes essential.

Basic information:

Marking manufacturerACR3200VR33 
Type of component:Trisil 
KategorieTrisil-Overvoltage Protection 
Configuration:single TY 
Case type:PUK 
Case [inch] :PUK110/73x27T 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:1200 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Idc max (Tc/Ta=60÷69°C)3200 [A]
du/dt (critical rate of rise of on-state voltage)10000 [V/µs]
di/dt (critical rate of rise of on-state current)400 [A/µs]
I2t (TC/TA=25°C)9050000 [A2s]
tf/tq (Turn-off / fall time)3000 [ns]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.00746 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

D - Outer diameter 110 [mm]
H - Height 27 [mm]
Fmin:48000 [N]
Fmax:59000 [N]

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on request
Manufacturer: PADA engineering  
All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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