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APT100GT120JRDQ4

Trans IGBT Module N-CH 1200V 123A 570000mW 4-Pin SOT-227 Tube

pcs
ID Code:187810
Manufacturer:Microchip Technology
Price with VAT : 85,048717 €
Price without VAT : 70,288196 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: APT100GT120JRDQ4
Central warehouse: 0 pcs
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 70,288196 €85,048717 €
5 + 67,360047 €81,505657 €
10 + 64,431504 €77,962120 €
25 + 61,502566 €74,418105 €


Basic information:

Marking manufacturerAPT100GT120JRDQ4 
Factory Lead Time42wk-49wk [wk]
Type of component:IGBT-NPT 
KategorieIGBT Full Silicon 
Configuration:single 1*(T+D) 
Construction:1*(IGBT+D) 
Number of circuits (in case) 1 ks
Case type:Modul 
Case [inch] :SOT-227 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)123 [A]
Idc max (Tc/Ta=100÷109°C)67 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UCE (sat) (@25°C)3.2 [V]
Pmax with heatsink (TC=25°C)570 [W]
tr (Turn-on / rise time)100 [ns]
tf/tq (Turn-off / fall time)36 [ns]
Qg (Total Gate Charge)685 [nC]
Cin (Input Capacitance)6700 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:38.1*25.3*12.0 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.22 [°C/W]
Rthjc2 Dioda, Tyristor0.56 [°C/W]
RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
D - Outer diameter 4.1 [mm]
L - Length 38.1 [mm]
W - Width 25.3 [mm]
H - Height 12 [mm]

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