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APT200GN60JDQ4

IGBT, 600V Field Stop, 283A, 682W, SOT-227

pcs
ID Code:187679
Manufacturer:Microchip Technology
Price with VAT : 66,1018 €
Price without VAT : 54,6296 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: APT200GN60JDQ4
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 54,6296 €66,1018 €
5 + 52,3532 €63,3473 €
10 + 50,0771 €60,5933 €
25 + 47,8011 €57,8393 €


Basic information:

Marking manufacturerAPT200GN60JDQ4 
Type of component:IGBT-Fieldstop 
KategorieIGBT Full Silicon 
Configuration:single 1*(T+D) 
Construction:1*(IGBT+D) 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSYes 
REACHNo 
Type of casing:MODUL 
Case:SOT-227 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 600 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)283 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)283 [A]
IF(AV) (Tc/Ta=100÷119°C)158 [A]
UCE (sat) (@25°C)1.45 [V]
Pmax with heatsink (TC=25°C)682 [W]
tr (Turn-on / rise time)80 [ns]
tf/tq (Turn-off / fall time)100 [ns]
Qg (Total Gate Charge)1180 [nC]
Cin (Input Capacitance)14100 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.22 [°C/W]
Rthjc2 Dioda, Tyristor0.33 [°C/W]
RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
Number of Pins
D - Outer diameter 4.1 [mm]
W - Width 25.3 [mm]
L - Length 38.1 [mm]
H - Height 12 [mm]
Rozměry/Velikost (LxWxH)SOT-227 [mm]

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