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IGBT, 600V Field Stop, 283A, 682W, SOT-227

ID Code:187679
Manufacturer:Microchip Technology
Price with VAT : 54,3941 €
Price without VAT : 44,9538 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: APT200GN60JDQ4
Central warehouse Zdice: 0 pcs
External warehouse (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 44,9538 €54,3941 €
5 + 43,0824 €52,1297 €
10 + 41,2093 €49,8632 €
25 + 39,3362 €47,5968 €

Basic information:

Marking manufacturerAPT200GN60JDQ4 
KategorieIGBT Full Silicon 
Type of component:!_igbt-fieldstop_! 
Configuration:!_single 1*(t+d)_! 
Type of material:!_si-silicon_! 
Type of casing:MODUL 

Packaging and weight:

Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 600 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)283 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)283 [A]
IF(AV) (Tc/Ta=100÷119°C)158 [A]
UCE (sat) (@25°C)1.45 [V]
Pmax with heatsink (TC=25°C)682 [W]
tr (Turn-on / rise time)80 [ns]
tf/tq (Turn-off / fall time)100 [ns]
Qg (Total Gate Charge)1180 [nC]
Cin (Input Capacitance)14100 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rthjc1 IGBT0.22 [°C/W]
Rthjc2 Dioda, Tyristor0.33 [°C/W]
Number of Pins
Dimensions of outlets0.00 [mm]

!_potrebujete poradit ?_! APT200GN60JDQ4 Microchip Technology

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