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APT29F80J

Trans MOSFET N-CH Si 800V 31A 4-Pin SOT-227 Tube

pcs
ID Code:188893
Manufacturer:Microchip Technology
Price with VAT : 49,998698 €
Price without VAT : 41,321238 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: APT29F80J
Factory Lead Time: 42wk-49wk
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 41,321238 €49,998698 €
5 + 39,601262 €47,917527 €
10 + 37,879314 €45,833970 €
25 + 36,157760 €43,750890 €


Basic information:

Marking manufacturerAPT29F80J 
Factory Lead Time42wk-49wk [wk]
Type of component:FET Tranzistor 
KategorieFET N-Channel 
Configuration:Single 1*(T-BD) 
Specification:Enhancement Mode 
Construction:1*FET-BD 
Number of circuits (in case) 1 ks
Case type:Modul 
Case [inch] :SOT-227 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 800 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)19 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
Pmax with heatsink (TC=25°C)543 [W]
Input Logic Level (UGS level)10V 
RDS (on) 10V (UGS=10÷15V)210 [mΩ]
trr recovery time (If=Inom.,@25°C)370 [ns]
tr (Turn-on / rise time)76 [ns]
tf/tq (Turn-off / fall time)67 [ns]
Qg (Total Gate Charge)303 [nC]
Cin (Input Capacitance)9326 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:38.1*25.3*12.0 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.23 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
D - Outer diameter 4.1 [mm]
L - Length 38.1 [mm]
W - Width 25.3 [mm]
H - Height 12 [mm]

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