APTGTQ100H65T3G
IGBT 650V
| ID Code: | 185771 |
| Manufacturer: | Microsemi / Microchip Technology |
| Price with VAT : | 118,5671 € |
| Price without VAT : | 97,9893 € |
| VAT: | 21 % |
| Availability: | on request |
| Total stock: | 0 pcs |
| Marking manufacturer: | APTGTQ100H65T3G |
| Central warehouse Zdice: | 0 pcs |
| External warehouse (delivery time 5÷10 days): | 0 pcs |
| Unit:: | pcs |
| quantity discounts | Quantity | Price without VAT | Price with VAT |
| 1 + | 97,9893 € | 118,5671 € |
| 3 + | 95,5543 € | 115,6207 € |
| 6 + | 90,6475 € | 109,6835 € |
| 12 + | 83,3057 € | 100,7999 € |
IGBT 650V H-Bridge • High speed IGBT 5
Basic information:
| Marking manufacturer | APTGTQ100H65T3G |
| Type of casing: | MODUL |
| Case: | !_modul-sp3f_! |
| Kategorie | IGBT Full Silicon |
| Configuration: | Full Bridge |
| Type of material: | !_si-silicon_! |
| RoHS | Yes |
| REACH | No |
| NOVINKA | A |
| RoHS1 | Ano |
Packaging and weight:
| Unit: | pcs |
| Weight: | 110 [g] |
| Type of packaging: | BOX |
| Small package (Number of units): | 1 |
Electro-physical parameters:
| Udc (URRM, UCEO, Umax) | 650 [V] ? Udc - definitions for components Udc = URRM - Diode Udc = UDRM , URRM - Thyristor Udc = UCEO - Transistors Udc = Umax - |
| Idc max (Tc/Ta=25÷160°C) | 100 [A] ? Current at the lowest temperature. Idc=IF (AV) - Diode Idc=IT (AV) - Thyristor Idc=IC max - BJT, IGBT Idc=ID max - Transistor: FET
|
| Idc max (Tc/Ta=25°C) | 100 [A] |
| Idc max (Tc/Ta=80÷89°C) | 60 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 2.2 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
| UCE (sat) (@25°C) | 2.2 [V] |
| Pmax with heatsink (TC=25°C) | 250 [W] |
| Input Logic Level (UGS level) | 20V |
| trr recovery time (If=Inom.,@25°C) | 46 [ns] |
| tr (Turn-on / rise time) | 15 [ns] |
| tf/tq (Turn-off / fall time) | 18 [ns] |
| fmax max.frequency (max./typ.) | 0.1 [MHz] ? fmax - definitions for components fmax = fT (BJT-transition frequency) fmax = fmax (operation frequency) |
| Qg (Total Gate Charge) | 240 [nC] |
| Cin (Input Capacitance) | 6000 [pF] |
Thermal and mechanical parameters:
| Tmin (minimum working temperature) | -40 [°C] |
| Tmax (maximum working temperature) | 175 [°C] |
| Rthjc1 IGBT | 0.6 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.7 [°C/W] |
| Dimensions of outlets | 0.00 [mm] |
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