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APTM120A20SG

MOSFET Half Bridge1200V/50A + Series Diodes & Parallel Diodes

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APTM120A20SG Microsemi / Microchip Technology
APTM120A20SG Microsemi / Microchip Technology
pcs
ID Code:185809
Manufacturer:Microsemi / Microchip Technology
Price with VAT : 318,4258 €
Price without VAT : 263,1618 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: APTM120A20SG
Central warehouse Zdice: 0 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 263,1618 €318,4258 €
3 + 256,5947 €310,4796 €


Basic information:

Marking manufacturerAPTM120A20SG 
Type of casing:MODUL 
Case:!_modul-sp6_! 
KategorieFET+Diode (FETKY) 
Configuration:Half Bridge 
Type of material:!_si-silicon_! 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:300 [g]
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)50 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)50 [A]
Idc max (Tc/Ta=80÷89°C)37 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)2.5 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)1250 [W]
Input Logic Level (UGS level)30V 
RDS (on) 10V (UGS=10÷15V)240 [mΩ]
trr recovery time (If=Inom.,@25°C)400 [ns]
tr (Turn-on / rise time)10 [ns]
tf/tq (Turn-off / fall time)36 [ns]
fmax max.frequency (max./typ.)0.05 [MHz] ?

fmax - definitions for components


fmax = fT (BJT-transition frequency)

fmax = fmax (operation frequency)

Qg (Total Gate Charge)600 [nC]
Cin (Input Capacitance)15200 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.1 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.08 [°C/W]
Rthjc2 Dioda, Tyristor0.14 [°C/W]
Dimensions of outlets0.00 [mm]

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