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Full SiC MOSFET 1700V / 74A

ID Code:186142
Manufacturer:Microchip Technology - Microsemi
Price with VAT : 1 788,2758 €
Price without VAT : 1 477,9139 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: APTMC170AM30CT1AG
Central warehouse Zdice: 0 pcs
External warehouse (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 1 477,9139 €1 788,2758 €
5 + 1 416,3177 €1 713,7444 €
10 + 1 354,7610 €1 639,2608 €
25 + 1 293,1648 €1 564,7294 €
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance

Basic information:

Marking manufacturerAPTMC170AM30CT1AG 
Type of casing:MODUL 
KategorieFull SiC (MOS+D) 
Configuration:Half Bridge 
Type of material:!_sic_! 

Packaging and weight:

Weight:80 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1700 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)100 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=25°C)100 [A]
Idc max (Tc/Ta=80÷89°C)74 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)700 [W]
Input Logic Level (UGS level)20V 
RDS (on) 10V (UGS=10÷15V)35 [mΩ]
trr recovery time (If=Inom.,@25°C)70 [ns]
tr (Turn-on / rise time)75 [ns]
tf/tq (Turn-off / fall time)55 [ns]
fmax max.frequency (max./typ.)0.03 [MHz] ?

fmax - definitions for components

fmax = fT (BJT-transition frequency)

fmax = fmax (operation frequency)

Qg (Total Gate Charge)380 [nC]
Cin (Input Capacitance)7344 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.18 [°C/W]
Rthjc2 Dioda, Tyristor0.24 [°C/W]
Dimensions of outlets0.00 [mm]

Alternatives and replacements

Alternative 1:186224 - MSCSM170AM23CT1AG (MIS) 

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