BAS35
120V 2x200mA Uf<750mV/10mA trr<50ns , 250mW/25°C
| ID Code: | 133457 |
| Manufacturer: | NXP Semiconductors (Philips) |
| Price with VAT : | 0,0982 € |
| Price without VAT : | 0,0812 € |
| VAT: | 21 % |
| Availability: | on request |
| Total stock: | 0 pcs |
| Marking manufacturer: | BAS35 |
| Central warehouse Zdice: | 0 pcs |
| External warehouse KV (delivery time 5÷10 days): | 0 pcs |
| Unit:: | pcs |
120V 2x200mA Uf<750mV/10mA trr<50ns , 250mW/25°C
Basic information:
| Marking manufacturer | BAS35 |
| Type of casing: | SMD |
| Case: | SOT- 23/3 |
| Kategorie | Diode Fast SMD |
| Type of component: | !_diode fast_! |
| Configuration: | 2xDiode, com.anode |
| Type of material: | !_si-silicon_! |
| Gap (by product number) | 999.99 [mm] |
| RoHS | Yes |
| REACH | No |
| NOVINKA | N |
| RoHS1 | Ano |
Packaging and weight:
| Unit: | pcs |
| Weight: | 0.09 [g] |
| Small package (Number of units): | 3000 |
Electro-physical parameters:
| Udc (URRM, UCEO, Umax) | 120 [V] ? Udc - definitions for components Udc = URRM - Diode Udc = UDRM , URRM - Thyristor Udc = UCEO - Transistors Udc = Umax - |
| Idc max (Tc/Ta=25÷160°C) | 0.25 [A] ? Current at the lowest temperature. Idc=IF (AV) - Diode Idc=IT (AV) - Thyristor Idc=IC max - BJT, IGBT Idc=ID max - Transistor: FET
|
| Idc max (Tc/Ta=25°C) | 0.25 [A] |
| UF (maximum forward voltage) | 1 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
| IR (reverse current) | 0.1 [µA] |
| Pmax without heatsink ( TA=25°C) | 0.25 [W] |
| trr recovery time (If=Inom.,@25°C) | 50 [ns] |
Thermal and mechanical parameters:
| Tmin (minimum working temperature) | 0 [°C] |
| Tmax (maximum working temperature) | 150 [°C] |
| Rth-a (thermal resistance) | 500 [°C/W] ? Rth-a - definitions for different components Rth-a = Rthja per whole case Rth-a - heatsink length L = 100 mm Rth-a - heatsink /pc
|
| Dimensions of outlets | 0.00 [mm] |
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