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BAS40

40V 200mA/25°C Uf<380mV/1mA/25°C , 200mW/Ta25°C

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40V 200mA/25°C Uf<380mV/1mA/25°C , 200mW/Ta25°C

Gap (by product number)

999.99 [mm]

Basic information:

Number of circuits (in case)

1 ks

U_dc (U_RRM, U_CEO, U_max)	40 [V] ? U_dc - definitions for components U_dc= U_RRM - Diode U_dc= U_DRM , U_RRM - Thyristor U_dc= U_CEO - Transistors U_dc= U_max -
I_dc_max (Tc/Ta=25÷160°C)	0.2 [A] ? Current at the lowest temperature. The specifications in the datasheet. I_dc=I_{F (AV)} - Diode I_dc=I_{T (AV)} - Thyristor I_dc=I_{C max} - BJT, IGBT I_dc=I_{D max} - Transistor: FET
I_{dc max} (Tc/Ta=25°C)	0.2 [A]
U_F (maximum forward voltage)	1 [V_DC] ? Test conditions: T_a=25°C, I_F=I_n/I_max
I_R (reverse current)	10 [µA]
du/dt (critical rate of rise of on-state voltage)	999999 [V/µs]
t_rr recovery time (If=Inom.,@25°C)	5 [ns]

Type of material:

!_si-silicon_!

T_min (minimum working temperature)	-55 [°C]
T_max (maximum working temperature)	125 [°C]
R_th-a (thermal resistance)	400 [°C/W] ? R_th-a - definitions for different components R_th-a= R_thja per whole case R_th-a - heatsink length L = 100 mm R_th-a - heatsink /pc

Dimensions of outlets

0.00 [mm]

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