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DACMH 40N1200

Full SiC MOSFET 1200V / 25A Half Bridge

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DACMH 40N1200 Daco Semiconductor
DACMH 40N1200 Daco Semiconductor
DACMH 40N1200 Daco Semiconductor
ID Code:185428
Manufacturer:Daco Semiconductor
Price with VAT : 188,975918 €
Price without VAT : 156,178445 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DACMH40N1200
Central warehouse: 0 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 156,178445 €188,975918 €
3 + 154,204501 €186,587446 €
5 + 152,230557 €184,198974 €
10 + 151,204106 €182,956968 €
Full SiC MOSFET 1200V / 25A Half Bridge

Basic information:

Marking manufacturerDACMH40N1200 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD) 
Configuration:Half Bridge 1*(Phase Leg) 
Specification:SiC Enhancement Mode MOSF 
Case type:Modul 
Case [inch] :HB-9434 
Type of material:SiC Full 
Material BaseNo Info 

Packaging and weight:

Weight:185 [g]
Type of packaging:BOX 
Small package (Number of units):12 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)25 [A]
Uisol (@25°C/1min/50Hz)3000 [V]
Pmax with heatsink (TC=25°C)208 [W]
Input Logic Level (UGS level)20V 
tr (Turn-on / rise time)24 [ns]
tf/tq (Turn-off / fall time)[ns]
Qg (Total Gate Charge)129 [nC]
Cin (Input Capacitance)1800 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:94x34x30 
Tmin (minimum working temperature)-50 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.26 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 94 [mm]
W - Width 34 [mm]
H - Height 30 [mm]

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Manufacturer: SEMIC EU  
All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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