Select a delivery location   Language:    Currency:    
Your cart is currently empty

DACMI80N1200

Single Full SiC MOSFET 1200V 80A 460W SOT-227

Image:
Click to enlarge
DACMI80N1200 Daco Semiconductor
DACMI80N1200 Daco Semiconductor
DACMI80N1200 Daco Semiconductor
pcs
ID Code:183083
Manufacturer:Daco Semiconductor
Price with VAT : 135,671011 €
Price without VAT : 112,124803 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DACMI80N1200
Central warehouse: 0 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 112,124803 €135,671012 €
2 + 106,398104 €128,741706 €
4 + 100,631912 €121,764614 €
7 + 97,748815 €118,276066 €


Basic information:

Marking manufacturerDACMI80N1200 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD) 
Configuration:single 1*(T-BD) 
Specification:SiC Enhancement Mode MOSF 
Construction:1*FET-BD 
Case type:Modul 
Case [inch] :SOT-227 
Type of material:SiC Full 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):13 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)50 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)6.5 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
Pmax with heatsink (TC=25°C)460 [W]
Input Logic Level (UGS level)20V 
trr recovery time (If=Inom.,@25°C)100 [ns]
tr (Turn-on / rise time)29 [ns]
tf/tq (Turn-off / fall time)30 [ns]
Qg (Total Gate Charge)196 [nC]
Cin (Input Capacitance)3050 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:38.1*25.3*12.0 
Tmin (minimum working temperature)-50 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.26 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.26 [°C/W]
RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
D - Outer diameter 4.1 [mm]
L - Length 38.1 [mm]
W - Width 25.3 [mm]
H - Height 12 [mm]

Alternatives and replacements

Alternative 1:183780 - IXFN50N120SiC (IXY) 
Alternative 2:186320 - MSC017SMA120J (MCH) 
Alternative products 1:IXFN50N120SiC 

Related items - DACMI80N1200

I+case 25,4x 38,2_F05-AL2 I+case 25,4x 38,2_F05-AL2   Thermally Conductive Pad for insulated Packages SOT-227, ISOTOP and in size 25,4x38,1 mm
ID: 181709   Mfr.no.: F05-AL2_25,4x38,2mm_SOT227Uni  
Quantity [pcs]1+40+80+200+
EUR/pcs0,7701420,7424960,6911530,639810
Total stock: 7491
Manufacturer: SEMIC EU  
RoHS
All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

!_potrebujete poradit ?_! DACMI80N1200 Daco Semiconductor

Your name, surname, company
Your email
Your phone number
Your question
     More information




!_poslete odkaz svemu znamenu_!

Your name
Your email
e-mail your friend
Please rewrite code from the image antispam

In the provision of services help us to cookies. By using our services you consent to our use of cookies.   More information