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Fast Recovery Diode Module 3300V/1000A ,Dual, AlSiC, Visol=10,2kV

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DFM1000AXM33-TS001 Dynex Semiconductor
DFM1000AXM33-TS001 Dynex Semiconductor
ID Code:179788
Manufacturer:Dynex Semiconductor
Price with VAT : 1 172,4082 €
Price without VAT : 968,9324 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DFM1000AXM33-TS001
Central warehouse Zdice: 0 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 968,9324 €1 172,4082 €
2 + 944,7209 €1 143,1122 €
Fast Recovery Diode Module 3300V/1000A ,Dual, AlSiC, Visol=10,2kV

Basic information:

Marking manufacturerDFM1000AXM33-TS001 
Type of casing:MODUL 
Case:MODUL - A 
KategorieDiode Fast Module 
Type of component:MODUL 
Configuration:3xDiode, single 

Electrical parameters:

Udc (URRM, UCEO, Umax) 3300 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

If (AV) per pkg.2000 [A]
Idc max (Tc/Ta=25÷160°C)1000 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=90÷99°C)1000 [A]
Uisol (@25°C/1min/50Hz)10200 [V]
UF (maximum forward voltage)2.4 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)60000 [µA]
I2t (TC/TA=25°C)320 [1000*A2s]
Pmax with heatsink (TC=25°C)5200 [W]

Material, color, design:

Type of material:!_si-silicon_! 
Material BaseALSiC 

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.024 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2


Gap (by product number) 999.99 [mm]
Dimensions of outlets0.00 [mm]

Packaging and weight:

Weight:1700 [g]
Packaging (Number of units):
Tray (Number of units):
Pallet (Number of units):

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