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DFM1200AXM45-TS001

Fast Recovery Diode Module 4500V/1200A ,Triple, AlSiC, Uisol=10,2kV

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ID Code:	171544
Manufacturer:	Dynex Semiconductor
Price with VAT :	1 362,6708 €
Price without VAT :	1 126,1742 €
VAT:	21 %
Availability:	In stock
Total stock:	8 pcs
Marking manufacturer:	DFM1200AXM45-TS010
Central warehouse Zdice:	8 pcs
External warehouse KV (delivery time 5÷10 days):	0 pcs
Unit::	pcs

Fast Recovery Diode Module 4500V/1200A ,Triple, AlSiC, Uisol=10,2kV

Gap (by product number)

999.99 [mm]

Basic information:

U_dc (U_RRM, U_CEO, U_max)	4500 [V] ? U_dc - definitions for components U_dc= U_RRM - Diode U_dc= U_DRM , U_RRM - Thyristor U_dc= U_CEO - Transistors U_dc= U_max -
If (AV) per pkg.	2400 [A]
I_dc_max (Tc/Ta=25÷160°C)	1200 [A] ? Current at the lowest temperature. The specifications in the datasheet. I_dc=I_{F (AV)} - Diode I_dc=I_{T (AV)} - Thyristor I_dc=I_{C max} - BJT, IGBT I_dc=I_{D max} - Transistor: FET
I_{dc max} (Tc/Ta=60÷69°C)	1200 [A]
U_isol (@25°C/1min/50Hz)	10200 [V]
U_F (maximum forward voltage)	2.8 [V_DC] ? Test conditions: T_a=25°C, I_F=I_n/I_max
I_R (reverse current)	90000 [µA]
I²t (T_C/T_A=25°C)	460 *[1000A²s]**
P_max with heatsink (T_C=25°C)	6250 [W]

Type of material:

!_si-silicon_!

T_min (minimum working temperature)	-40 [°C]
T_max (maximum working temperature)	125 [°C]
R_th-c (thermal resistance)	0.016 [°C/W] ? R_th-c - definitions for different components R_th-c= R_thjc per whole case R_th-c- foil surface inch²

Dimensions of outlets

0.00 [mm]

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