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DIM 125PHM33-TS000

SPT IGBT Module 3300V/125A Half Bridge, AlSiC, low switching loss

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DIM 125PHM33-TS000 Dynex Semiconductor
DIM 125PHM33-TS000 Dynex Semiconductor
DIM 125PHM33-TS000 Dynex Semiconductor
ID Code:185401
Manufacturer:Dynex Semiconductor
Price with VAT : 550,871689 €
Price without VAT : 455,265859 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM125PHM33-TS000
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 455,265859 €550,871689 €
3 + 443,892425 €537,109834 €
6 + 421,104496 €509,536440 €
12 + 386,984192 €468,250872 €
IGBT Module 3300V/125A Half Bridge, AlSiC, Chip technology Soft Punch Through Silicon and high current density enhanced DMOS.

Basic information:

Marking manufacturerDIM125PHM33-TS000 
KategorieIGBT Full Silicon 
Configuration:Half Bridge 1*(Phase Leg) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :MODUL-P 
Type of material:Si-Silicon 
Material BaseALSiC 

Packaging and weight:

Weight:700 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)125 [A]
IF(AV) (Tc/Ta=100÷119°C)125 [A]
Uisol (@25°C/1min/50Hz)6000 [V]
UF (maximum forward voltage)2.5 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.2 [V]
I2t (TC/TA=25°C)5000 [A2s]
Pmax with heatsink (TC=25°C)1300 [W]
Esw (125°C)1200 [mJ]
tr (Turn-on / rise time)520 [ns]
tf/tq (Turn-off / fall time)610 [ns]
Qg (Total Gate Charge)2500 [nC]
Cin (Input Capacitance)22500 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:140x73x38 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.096 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 140 [mm]
W - Width 73 [mm]
H - Height 38 [mm]

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