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DIM 450M1HS12-PB500

IGBT 1200V

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DIM 450M1HS12-PB500 Dynex Semiconductor
DIM 450M1HS12-PB500 Dynex Semiconductor
ID Code:185021
Manufacturer:Dynex Semiconductor
Price with VAT : 206,2424 €
Price without VAT : 170,4483 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM450M1HS12-PB500
Central warehouse Zdice: 0 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 170,4483 €206,2424 €
3 + 162,7006 €196,8677 €
IGBT 1200V

Basic information:

Marking manufacturerDIM450M1HS12-PB500 
Type of casing:MODUL 
KategorieIGBT Full Silicon 
Configuration:Half Bridge 
Type of material:!_si-silicon_! 
Material BaseCu 

Packaging and weight:

Weight:345 [g]
Small package (Number of units):10 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)450 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=100÷109°C)450 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)1.65 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)1.65 [V]
I2t (TC/TA=25°C)4.6 [1000*A2s]
Pmax with heatsink (TC=25°C)2800 [W]
Input Logic Level (UGS level)20V 
tr (Turn-on / rise time)70 [ns]
tf/tq (Turn-off / fall time)260 [ns]
fmax max.frequency (max./typ.)0.015 [MHz] ?

fmax - definitions for components

fmax = fT (BJT-transition frequency)

fmax = fmax (operation frequency)

Qg (Total Gate Charge)4600 [nC]
Cin (Input Capacitance)62000 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.052 [°C/W]
Rthjc2 Dioda, Tyristor0.086 [°C/W]
Dimensions of outlets0.00 [mm]

Alternatives and replacements

Alternative 1:TG 450HF12M1-S3A00 

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