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DIM 450M1HS17-PA500

IGBT 1700V

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DIM 450M1HS17-PA500 Dynex Semiconductor
DIM 450M1HS17-PA500 Dynex Semiconductor
DIM 450M1HS17-PA500 Dynex Semiconductor
pcs
ID Code:185022
Manufacturer:Dynex Semiconductor
Price with VAT : 155,998026 €
Price without VAT : 128,923988 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM450M1HS17-PA500
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 128,923988 €155,998025 €
3 + 124,225074 €150,312340 €
6 + 111,352419 €134,736427 €
12 + 99,624877 €120,546101 €
IGBT 1700V

Basic information:

Marking manufacturerDIM450M1HS17-PA500 
KategorieIGBT Full Silicon 
Configuration:Half Bridge 1*(Phase Leg) 
Construction:2*(IGBT+D) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :SEMiX-3p 
Type of material:Si-Silicon 
Material BaseCu 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:450 [g]
Type of packaging:BOX 
Small package (Number of units):10 

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)450 [A]
Idc max (Tc/Ta=90÷99°C)450 [A]
Uisol (@25°C/1min/50Hz)3400 [V]
UF (maximum forward voltage)2.4 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)1.8 [V]
I2t (TC/TA=25°C)16200 [A2s]
Pmax with heatsink (TC=25°C)2270 [W]
tr (Turn-on / rise time)65 [ns]
tf/tq (Turn-off / fall time)560 [ns]
Qg (Total Gate Charge)4400 [nC]
Cin (Input Capacitance)42000 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:150x62x21 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.055 [°C/W]
Rthjc2 Dioda, Tyristor0.095 [°C/W]
L - Length 150 [mm]
W - Width 62 [mm]
H - Height 21 [mm]

Alternatives and replacements

Alternative 1:183413 - TG 450HF17M1-S300 (DYN) 
Alternative products 1:TG450HF17M1-S300 

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