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DIM 600M1HS12-PC500

IGBT 1200V

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DIM 600M1HS12-PC500 Dynex Semiconductor
DIM 600M1HS12-PC500 Dynex Semiconductor
DIM 600M1HS12-PC500 Dynex Semiconductor
No longer in stock
ID Code:185023
Manufacturer:Dynex Semiconductor
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM600M1HS12-PC500
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
IGBT 1200V

Basic information:

Marking manufacturerDIM600M1HS12-PC500 
KategorieIGBT Full Silicon 
Configuration:Half Bridge 1*(Phase Leg) 
Construction:2*(IGBT+D) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :SEMiX-3p 
Type of material:Si-Silicon 
Material BaseCu 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:450 [g]
Type of packaging:BOX 
Small package (Number of units):10 

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)600 [A]
Idc max (Tc/Ta=100÷109°C)600 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)1.9 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)1.85 [V]
I2t (TC/TA=25°C)21600 [A2s]
Pmax with heatsink (TC=25°C)3000 [W]
tr (Turn-on / rise time)110 [ns]
tf/tq (Turn-off / fall time)120 [ns]
Qg (Total Gate Charge)6900 [nC]
Cin (Input Capacitance)93000 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:150x62x21 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.049 [°C/W]
Rthjc2 Dioda, Tyristor0.077 [°C/W]
L - Length 150 [mm]
W - Width 62 [mm]
H - Height 21 [mm]

Alternatives and replacements

Alternative 1:183412 - TG 450HF12M1-S3A00 (DYN) 

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