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DIM1200ASM45-TF000

IGBT 4500V /1200A Single, AlSiC

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DIM1200ASM45-TF000 Dynex Semiconductor
DIM1200ASM45-TF000 Dynex Semiconductor
DIM1200ASM45-TF000 Dynex Semiconductor
pcs
ID Code:182767
Manufacturer:Dynex Semiconductor
Price with VAT : 1 615,194872 €
Price without VAT : 1 334,871795 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM1200ASM45-TF000
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 1 334,871795 €1 615,194872 €
3 + 1 301,499014 €1 574,813807 €
6 + 1 234,753452 €1 494,051677 €
12 + 1 134,635108 €1 372,908481 €
IGBT 4500V /1200A Single, AlSiC

Basic information:

Marking manufacturerDIM1200ASM45-TF000 
KategorieIGBT Full Silicon 
Configuration:single-E3*(T+D) 
Construction:3*(IGBT+D) 
Number of circuits (in case) 3 ks
Case type:Modul 
Case [inch] :MODUL-A 
Type of material:Base AlSiC 
Material: HousingSi-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:2010.2 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)1200 [A]
Idc max (Tc/Ta=80÷89°C)1200 [A]
Uisol (@25°C/1min/50Hz)7400 [V]
UF (maximum forward voltage)2.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)3.5 [V]
I2t (TC/TA=25°C)460000 [A2s]
Pmax with heatsink (TC=25°C)12500 [W]
tr (Turn-on / rise time)290 [ns]
tf/tq (Turn-off / fall time)400 [ns]
Qg (Total Gate Charge)17000 [nC]
Cin (Input Capacitance)150000 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:190x140x48 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.008 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 190 [mm]
W - Width 140 [mm]
H - Height 48 [mm]

Alternatives and replacements

Alternative products 1:CM1200HC-90R 

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