Czech Republic (čeština) English Germany (Deutsch) Austria (Deutsch) Switzerland (Deutsch) Slovak Republic (slovenčina) Hungary (magyar) Romania (Română) France (français) Italy (italiano) Poland (polski) Estonia (eesti keel) Russia (pусский) Spain (español) Slovenia (slovenščina) Croatia (hrvatski) Bulgaria (български)
Your cart is currently empty


Fast IGBT Module 3300V/1200A Single Fast SiC Diodes

Click to enlarge
DIM1200ESM33-MH00 Dynex Semiconductor
DIM1200ESM33-MH00 Dynex Semiconductor
No longer in stock
ID Code:185397
Manufacturer:Dynex Semiconductor
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM1200ESM33-MH00
Central warehouse Zdice: 0 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
This uses our latest technology trench IGBT, optimised for fast switching, and a SiC diode.
Some of the system-level benefits are improved efficiency, reduced volume/ size and weight. New inverter/converter topologies can also be realised with these devices. SiC devices (MOSFETs, Schottky diodes) are still expensive and hybrid Si/Sic module strikes a perfect balance between performance and cost. The SiC Schottky almost completely eliminates the reverse recovery loss. As a result the Erec loss is minuscule in hybrid module. ln addition, for applications such as PWM
inverters that have a hard switched turn-on there is also a significant reduction in turn-on losses due the dramatic reduction in free wheel diode recovery current.

Basic information:

Marking manufacturerDIM1200ESM33-MH00 
Type of casing:MODUL 
Case:MODUL - E 
KategorieIGBT Hybrid SiC 
Configuration:!_singl-e 3*(t+d)_! 
Type of material:!_sic hybrid_! 
Material BaseALSiC 

Packaging and weight:

Weight:1400 [g]
Small package (Number of units):

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 3300 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)1200 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


IF(AV) (Tc/Ta=100÷119°C)1200 [A]
Uisol (@25°C/1min/50Hz)6000 [V]
UF (maximum forward voltage)2.3 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.9 [V]
Pmax with heatsink (TC=25°C)17900 [W]
Input Logic Level (UGS level)20V 
tr (Turn-on / rise time)360 [ns]
tf/tq (Turn-off / fall time)290 [ns]
fmax max.frequency (max./typ.)0.001 [MHz] ?

fmax - definitions for components

fmax = fT (BJT-transition frequency)

fmax = fmax (operation frequency)

Qg (Total Gate Charge)13000 [nC]
Cin (Input Capacitance)140000 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.007 [°C/W]
Rthjc2 Dioda, Tyristor0.03 [°C/W]
Dimensions of outlets0.00 [mm]

Your question DIM1200ESM33-MH00

Your name, surname, company:*
Your email:*
Your phone number:*
Your question:*
Please rewrite code:* antispam
     More information

!_poslete odkaz svemu znamenu_!

Your name
Your email
e-mail your friend
Please rewrite code from the image antispam
Copyright © by


In the provision of services help us to cookies. By using our services you consent to our use of cookies.   More information