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DIM1400H1HS12-PA500

IGBT 1200V

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DIM1400H1HS12-PA500 Dynex Semiconductor
DIM1400H1HS12-PA500 Dynex Semiconductor
DIM1400H1HS12-PA500 Dynex Semiconductor
DIM1400H1HS12-PA500 Dynex Semiconductor
No longer in stock
ID Code:185015
Manufacturer:Dynex Semiconductor
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM1400H1HS12-PA500
Central warehouse: 0 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
IGBT 1200V

Basic information:

Marking manufacturerDIM1400H1HS12-PA500 
KategorieIGBT Full Silicon 
Configuration:Half Bridge 1*(Phase Leg) 
Construction:2*(IGBT+D) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :PrimePACK3 
Type of material:Si-Silicon 
Material BaseCu 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:1290 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)1400 [A]
Idc max (Tc/Ta=100÷109°C)1400 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)1.9 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)1.8 [V]
I2t (TC/TA=25°C)172000 [A2s]
Pmax with heatsink (TC=25°C)7500 [W]
tr (Turn-on / rise time)165 [ns]
tf/tq (Turn-off / fall time)230 [ns]
Qg (Total Gate Charge)13000 [nC]
Cin (Input Capacitance)118000 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:250x89x38 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.02 [°C/W]
Rthjc2 Dioda, Tyristor0.036 [°C/W]
Rthcs pouzdro-chladič0.017 [°C/W]
L - Length 250 [mm]
W - Width 89 [mm]
H - Height 38 [mm]

Alternatives and replacements

Alternative 1:181735 - SKM1400GB12P4 (SMK) 
Alternative products 1:FF1400R12IP4 
Alternative products 2:TG1400HF12H1-S300 
Alternative products 3:2MBI1400XXB120P-50 

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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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