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Rectifier Diode 3000V/1320A

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DRD1320G30 Dynex Semiconductor
DRD1320G30 Dynex Semiconductor
DRD1320G30 Dynex Semiconductor
ID Code:185978
Manufacturer:Dynex Semiconductor
Price with VAT : 125,9854 €
Price without VAT : 104,1202 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DRD1320G30
Central warehouse Zdice: 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 104,1202 €125,9854 €
3 + 99,6144 €120,5334 €
6 + 90,5216 €109,5312 €
12 + 81,4695 €98,5780 €
Rectifier Diode 3000V/1320A

Basic information:

Marking manufacturerDRD1320G30 
Type of component:Diode Standard 
KategorieDiode Standard Disc 
Configuration:single (1D) 
Type of material:!_si-silicon_! 
Gap (by product number) 999.99 [mm]
Type of casing:PUK 
Case:PUK 58/34x26 

Packaging and weight:

Weight:275 [g]
Type of packaging:BOX 
Small package (Number of units):10 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 3000 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)1849 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.

Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET


Idc max (Tc/Ta=70÷79°C)1849 [A]
Idc max (Tc/Ta=100÷109°C)1315 [A]
UF (maximum forward voltage)1.3 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)50000 [µA]
I2t (TC/TA=25°C)1280 [1000*A2s]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.032 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

D - Outer diameter 58.5 [mm]
H - Height 27 [mm]
Fmin:11500 [N]
Fmax:13500 [N]

Alternatives and replacements

Alternative products 1:DV827C-1100-28 
Alternative products 2:5SDD 11T2800 

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