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GA200TD120U

IGBT 1200V

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GA200TD120U International Rectifier
GA200TD120U International Rectifier
pcs
ID Code:140366
Manufacturer:International Rectifier
Price with VAT : 169,0011 €
Price without VAT : 139,6703 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: GA200TD120U
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 139,6703 €169,0011 €
12 + 167,6044 €202,8013 €
IGBT 1200V

Basic information:

Marking manufacturerGA200TD120U 
Type of casing:!_mod_! 
Case:SEMITRANS-3 
Configuration:Half Bridge 
RoHSno 
REACHno 

Electrical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)200 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)200 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)3.2 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.3 [V]
Pmax with heatsink (TC=25°C)1040 [W]
trr recovery time (If=Inom.,@25°C)196 [ns]
tr (Turn-on / rise time)201 [ns]
tf/tq (Turn-off / fall time)341 [ns]
fmax max.frequency (max./typ.)0.04 [MHz] ?

fmax - definitions for components


fmax = fT (BJT-transition frequency)

fmax = fmax (operation frequency)

Qg (Total Gate Charge)1660 [nC]
Cin (Input Capacitance)37343 [pF]

Material, color, design:

Material:!_si-silicon_! 

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.12 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Dimensions:

Dimensions of outlets0.00 [mm]

Packaging and weight:

Unit:pcs 
Weight:423 [g]
Packaging (Number of units):

Alternatives and replacements

Alternative 1:BSM100GB120DLK 
Alternative products 1:MG150Q2YS51 

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