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DIM 800XSM45-TS001

IGBT Module 4500V/800A Single, AlSiC, In Package Uisol=10,2kV

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DIM 800XSM45-TS001 Dynex Semiconductor
DIM 800XSM45-TS001 Dynex Semiconductor
DIM 800XSM45-TS001 Dynex Semiconductor
pcs
ID Code:161268
Manufacturer:Dynex Semiconductor
Price with VAT : 1 002,550948 €
Price without VAT : 828,554502 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DIM800XSM45-TS001
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 828,554502 €1 002,550947 €
3 + 807,819905 €977,462085 €
6 + 766,390205 €927,332148 €
12 + 704,265403 €852,161138 €
IGBT Module 4500V/800A Single, AlSiC, In Package Uisol=10,2kV

Basic information:

Marking manufacturerDIM800XSM45-TS001 
KategorieIGBT Full Silicon 
Configuration:single-E2*(T+D) 
Construction:2*(IGBT+D) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :MODUL-X 
Type of material:Si-Silicon 
Material BaseALSiC 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:1018.6 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)800 [A]
Idc max (Tc/Ta=90÷99°C)800 [A]
Uisol (@25°C/1min/50Hz)10200 [V]
UF (maximum forward voltage)2.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.7 [V]
I2t (TC/TA=25°C)205000 [A2s]
Pmax with heatsink (TC=25°C)8300 [W]
tr (Turn-on / rise time)350 [ns]
tf/tq (Turn-off / fall time)600 [ns]
Qg (Total Gate Charge)15000 [nC]
Cin (Input Capacitance)100000 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:130x140x48 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.012 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 130 [mm]
W - Width 140 [mm]
H - Height 48 [mm]

Alternatives and replacements

Alternative products 1:FZ800R45KL3_B5 
Alternative products 2:CM800HG-90R 

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