IGBT Module 4500V/800A Single, AlSiC, In Package Uisol=10,2kV
Basic information:
Marking manufacturer | DIM800XSM45-TS001 |
Kategorie | IGBT Full Silicon |
Configuration: | single-E2*(T+D) |
Construction: | 2*(IGBT+D) |
Number of circuits (in case) | 2 ks |
Case type: | Modul |
Case [inch] : | MODUL-X |
Type of material: | Si-Silicon |
Material Base | ALSiC |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 1018.6 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 2 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 800 [A] |
Idc max (Tc/Ta=90÷99°C) | 800 [A] |
Uisol (@25°C/1min/50Hz) | 10200 [V] |
UF (maximum forward voltage) | 2.8 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 2.7 [V] |
I2t (TC/TA=25°C) | 205000 [A2s] |
Pmax with heatsink (TC=25°C) | 8300 [W] |
tr (Turn-on / rise time) | 350 [ns] |
tf/tq (Turn-off / fall time) | 600 [ns] |
Qg (Total Gate Charge) | 15000 [nC] |
Cin (Input Capacitance) | 100000 [pF] |
Thermal and mechanical parameters:
Dimensions (L*W*H) [mm]: | 130x140x48 |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 125 [°C] |
Rth-c (thermal resistance) | 0.012 [°C/W] ?Rth-c - definitions for different components
Rth-c = Rthjc per whole case
Rth-c - foil surface inch2 |
L - Length | 130 [mm] |
W - Width | 140 [mm] |
H - Height | 48 [mm] |
Alternatives and replacements
Alternative products 1: | FZ800R45KL3_B5 |
Alternative products 2: | CM800HG-90R |