Trans IGBT Chip N-CH 1200V 100A 450000mW 4-Pin SOT-227B
Basic information:
Marking manufacturer | IXDN55N120D1 |
Kategorie | IGBT Full Silicon |
Configuration: | single 1*(T+D) |
Construction: | 1*(IGBT+D) |
Number of circuits (in case) | 1 ks |
Case type: | Modul |
Case [inch] : | SOT-227 |
Type of material: | Si-Silicon |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 36 [g] |
Type of packaging: | TUBE |
Small package (Number of units): | 10 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 100 [A] |
Idc max (Tc/Ta=90÷99°C) | 62 [A] |
Uisol (@25°C/1min/50Hz) | 2500 [V] |
UF (maximum forward voltage) | 2.4 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 2.3 [V] |
Pmax with heatsink (TC=25°C) | 700 [W] |
trr recovery time (If=Inom.,@25°C) | 200 [ns] |
tr (Turn-on / rise time) | 70 [ns] |
tf/tq (Turn-off / fall time) | 70 [ns] |
Qg (Total Gate Charge) | 600 [nC] |
Cin (Input Capacitance) | 3300 [pF] |
Thermal and mechanical parameters:
Dimensions (L*W*H) [mm]: | 38.1*25.3*12.0 |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
Rth-c (thermal resistance) | 0.28 [°C/W] ?Rth-c - definitions for different components
Rth-c = Rthjc per whole case
Rth-c - foil surface inch2 |
RM - Pitch pins | 15 [mm] |
RM1 - Spacing of rows | 12.7 [mm] |
D - Outer diameter | 4.1 [mm] |
L - Length | 38.1 [mm] |
W - Width | 25.3 [mm] |
H - Height | 12 [mm] |
Alternatives and replacements
Alternative 1: | 193839 - SG55N120DS (SRF) |