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BSM50GD120DN2

IGBT 1200V

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BSM50GD120DN2 Infineon Technologies
BSM50GD120DN2 Infineon Technologies
pcs
ID Code:168032
Manufacturer:Infineon Technologies
Price with VAT : 189,193918 €
Price without VAT : 156,358610 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: BSM50GD120DN2
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 156,358610 €189,193918 €
3 + 153,949447 €186,278831 €
5 + 152,764613 €184,845182 €
10 + 151,579779 €183,411533 €
IGBT 1200V

Basic information:

Marking manufacturerBSM50GD120DN2 
KategorieIGBT Full Silicon 
Configuration:Bridge 3f 
Construction:6*(IGBT+D) 
Number of circuits (in case) 6 ks
Case type:Modul 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:233.2 [g]
Type of packaging:BOX 
Small package (Number of units):10 

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)72 [A]
Idc max (Tc/Ta=80÷89°C)50 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UF (maximum forward voltage)2.3 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.5 [V]
Pmax with heatsink (TC=25°C)350 [W]
trr recovery time (If=Inom.,@25°C)200 [ns]
tr (Turn-on / rise time)56 [ns]
tf/tq (Turn-off / fall time)70 [ns]
Qg (Total Gate Charge)140 [nC]
Cin (Input Capacitance)3300 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.35 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

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