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DFM 800XXM45-TS001

4500V 2x800A/Tc65°C dvojice AlSiC ,Dual, AlSic, Uisol=10,2kV

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DFM 800XXM45-TS001 Dynex Semiconductor
DFM 800XXM45-TS001 Dynex Semiconductor
pcs
ID Code:171539
Manufacturer:Dynex Semiconductor
Price with VAT : 815,364139 €
Price without VAT : 673,854660 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DFM800XXM45-TS001
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 673,854660 €815,364139 €
3 + 656,990521 €794,958530 €
6 + 623,301738 €754,195103 €
12 + 572,748815 €693,026066 €
4500V 2x800A/Tc65°C dvojice AlSiC ,Dual, AlSic, Uisol=10,2kV

Basic information:

Marking manufacturerDFM800XXM45-TS001 
Type of component:Diode Fast 
KategorieDiode Fast Module 
Configuration:single (2D) 
Case type:Modul 
Case [inch] :MODUL-X 
Type of material:Si-Silicon 
Material BaseALSiC 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:1018.6 [g]
Small package (Number of units):

Electro-physical parameters:

If (AV) per pkg.1600 [A]
IFAV / IC (Tc/Ta=25°C)800 [A]
Idc max (Tc/Ta=60÷69°C)800 [A]
Uisol (@25°C/1min/50Hz)10200 [V]
UF (maximum forward voltage)2.8 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)60000 [µA]
I2t (TC/TA=25°C)300000 [A2s]
Pmax with heatsink (TC=25°C)4160 [W]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:130x140x48 
Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.024 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 130 [mm]
W - Width 140 [mm]
H - Height 48 [mm]

Alternatives and replacements

Alternative products 1:5SLD 0650J450300 
Alternative products 2:MDM800H45E2 
Alternative products 3:RM800DG-90F 
Alternative products 4:RM900DB-90S 

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