Trans IGBT Module N-CH 1200V 320A 1100000mW Automotive
Basic information:
Marking manufacturer | FF200R12KT4 |
Type of component: | IGBT-Trench/Fieldstop |
Kategorie | IGBT Full Silicon |
Configuration: | Half Bridge 1*(Phase Leg) |
Construction: | 2*(IGBT+D) |
Number of circuits (in case) | 2 ks |
Case type: | Modul |
Case [inch] : | SEMITRANS-3 |
Type of material: | Si-Silicon |
Material Base | Cu+AL2O3 |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 355 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 10 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 320 [A] |
Idc max (Tc/Ta=100÷109°C) | 200 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.65 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 1.75 [V] |
I2t (TC/TA=25°C) | 7800 [A2s] |
Pmax with heatsink (TC=25°C) | 1100 [W] |
tr (Turn-on / rise time) | 40 [ns] |
tf/tq (Turn-off / fall time) | 100 [ns] |
Qg (Total Gate Charge) | 1800 [nC] |
Cin (Input Capacitance) | 14000 [pF] |
Thermal and mechanical parameters:
Dimensions (L*W*H) [mm]: | 108x62x31 |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
Rth-c (thermal resistance) | 0.135 [°C/W] ?Rth-c - definitions for different components
Rth-c = Rthjc per whole case
Rth-c - foil surface inch2 |
RM - Pitch pins | 28 [mm] |
L - Length | 106.4 [mm] |
W - Width | 61.4 [mm] |
H - Height | 30.5 [mm] |
Alternatives and replacements
Alternative 1: | 133748 - SKM200GB12T4 (SMK) |
Alternative 2: | 144896 - SKM200GB12V (SMK) |