Trans IGBT Module N-CH 1200V
Basic information:
Marking manufacturer | SKM100GAL12T4 |
Kategorie | IGBT Full Silicon |
Configuration: | Low side 1*(Boost Chopper) |
Construction: | 1*(IGBT+D)+D |
Number of circuits (in case) | 1 ks |
Case type: | Modul |
Case [inch] : | SEMITRANS-2 |
Type of material: | Si-Silicon |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 167.7 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 8 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 160 [A] |
Idc max (Tc/Ta=80÷89°C) | 123 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 2.2 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 1.8 [V] |
tr (Turn-on / rise time) | 47 [ns] |
tf/tq (Turn-off / fall time) | 75 [ns] |
Qg (Total Gate Charge) | 565 [nC] |
Cin (Input Capacitance) | 6150 [pF] |
Thermal and mechanical parameters:
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
Rth-c (thermal resistance) | 0.27 [°C/W] ?Rth-c - definitions for different components
Rth-c = Rthjc per whole case
Rth-c - foil surface inch2 |
L - Length | 94 [mm] |
W - Width | 34 [mm] |
H - Height | 30 [mm] |
Alternatives and replacements
Alternative products 1: | SKM75GAL123D |
Alternative products 2: | SKM100GAL123D |
Alternative products 3: | SKM145GAL123D |