IGBT Module 3300V/1500A Single, AlSiC ,
Basic information:
Marking manufacturer | MBN1500E33E2 |
Kategorie | IGBT Full Silicon |
Configuration: | single-E3*(T+D) |
Construction: | 3*(IGBT+D) |
Number of circuits (in case) | 3 ks |
Case type: | Modul |
Case [inch] : | MODUL-E |
Type of material: | Si-Silicon |
Material Base | ALSiC |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 1900 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 2 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 1500 [A] |
Idc max (Tc/Ta=90÷99°C) | 1500 [A] |
Uisol (@25°C/1min/50Hz) | 6000 [V] |
UF (maximum forward voltage) | 2.6 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 2.95 [V] |
I2t (TC/TA=25°C) | 720000 [A2s] |
trr recovery time (If=Inom.,@25°C) | 800 [ns] |
tr (Turn-on / rise time) | 1600 [ns] |
tf/tq (Turn-off / fall time) | 900 [ns] |
Qg (Total Gate Charge) | 25000 [nC] |
Cin (Input Capacitance) | 195000 [pF] |
Thermal and mechanical parameters:
Dimensions (L*W*H) [mm]: | 190x140x38 |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
Rth-c (thermal resistance) | 0.008 [°C/W] ?Rth-c - definitions for different components
Rth-c = Rthjc per whole case
Rth-c - foil surface inch2 |
L - Length | 190 [mm] |
W - Width | 140 [mm] |
H - Height | 38 [mm] |
Alternatives and replacements
Alternative 1: | - DIM1500ESM33-TL000 &DY () |
Alternative products 1: | CM1500HC-66R |