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BSM50GB170DN2

IGBT 1700V

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BSM50GB170DN2 Infineon Technologies
BSM50GB170DN2 Infineon Technologies
BSM50GB170DN2 Infineon Technologies
No longer in stock
ID Code:178104
Manufacturer:Infineon Technologies
Price: on request
VAT:21 %
Total stock:0 pcs
Marking manufacturer: BSM50GB170DN2HOSA1
Unit:: pcs
IGBT 1700V

Basic information:

Marking manufacturerBSM50GB170DN2HOSA1 
KategorieIGBT Full Silicon 
Configuration:Half Bridge 1*(Phase Leg) 
Construction:2*(IGBT+D) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :SEMITRANS-2s 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:0.09 [g]
Type of packaging:BOX 
Small package (Number of units):
Big package (BOX):10 

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)72 [A]
Idc max (Tc/Ta=80÷89°C)50 [A]
Uisol (@25°C/1min/50Hz)4000 [V]
UF (maximum forward voltage)2.3 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)3.4 [V]
Pmax with heatsink (TC=25°C)500 [W]
trr recovery time (If=Inom.,@25°C)300 [ns]
tr (Turn-on / rise time)150 [ns]
tf/tq (Turn-off / fall time)90 [ns]
Cin (Input Capacitance)8000 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.25 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 94 [mm]
W - Width 34 [mm]
H - Height 30 [mm]

Alternatives and replacements

Alternative 1:171351 - SKM 75GB17E4 &SK (SMK) 

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