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IXFN210N30P3

300V 192A N-channel MOSFET SOT-227B , 14,5mO miniBLOC

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IXFN210N30P3 Ixys
IXFN210N30P3 Ixys
IXFN210N30P3 Ixys
IXFN210N30P3 Ixys
pcs
ID Code:178481
Manufacturer:Ixys
Price with VAT : 36,444048 €
Price without VAT : 30,119048 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: IXFN210N30P3
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 30,119048 €36,444048 €
3 + 29,722222 €35,963889 €
5 + 29,523810 €35,723810 €
10 + 29,285714 €35,435714 €
300V 192A N-channel MOSFET SOT-227B , 14,5mO miniBLOC

Basic information:

Marking manufacturerIXFN210N30P3 
Type of component:FET Tranzistor 
KategorieFET N-Channel 
Configuration:Single 1*(T-BD) 
Specification:Enhancement Mode 
Construction:1*FET-BD 
Number of circuits (in case) 1 ks
Case type:Modul 
Case [inch] :SOT-227 
Type of material:Si-Silicon 
Material BaseNo Info 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):10 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 300 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Uisol (@25°C/1min/50Hz)2500 [V]
Pmax with heatsink (TC=25°C)1500 [W]
RDS (on) 10V (UGS=10÷15V)14.5 [mΩ]
trr recovery time (If=Inom.,@25°C)250 [ns]
tr (Turn-on / rise time)25 [ns]
tf/tq (Turn-off / fall time)13 [ns]
Qg (Total Gate Charge)268 [nC]
Cin (Input Capacitance)16200 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:38.1*25.3*12.0 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.18 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
D - Outer diameter 4.1 [mm]
L - Length 38.1 [mm]
W - Width 25.3 [mm]
H - Height 12 [mm]

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