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DPI2100P45A5200

Press-Pack IGBT 4500V/2100A

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DPI2100P45A5200 Dynex Semiconductor
DPI2100P45A5200 Dynex Semiconductor
DPI2100P45A5200 Dynex Semiconductor
DPI2100P45A5200 Dynex Semiconductor
No longer in stock
ID Code:178526
Manufacturer:Dynex Semiconductor
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DPI2100P45A5200
Central warehouse: 0 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
Press-Pack IGBT 4500V/2100A

Basic information:

Marking manufacturerDPI2100P45A5200 
KategorieIGBT Full Silicon 
Configuration:single (1T) 
Construction:1*IGBT 
Number of circuits (in case) 1 ks
Case type:PUK 
Case [inch] :PUK170/125x27T 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:3700 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)2100 [A]
Idc max (Tc/Ta=70÷79°C)2100 [A]
UCE (sat) (@25°C)2.4 [V]
Pmax with heatsink (TC=25°C)22700 [W]
tr (Turn-on / rise time)420 [ns]
tf/tq (Turn-off / fall time)1900 [ns]
Qg (Total Gate Charge)38000 [nC]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.0044 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

D - Outer diameter 170 [mm]
H - Height 27 [mm]
Fmin:50000 [N]
Fmax:70000 [N]

Alternatives and replacements

Alternative products 1:T1800GB45E 
Alternative products 2:5SNA 2000K451300 

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