Trans IGBT Module N-CH 600V 60A 19-Pin
Basic information:
Marking manufacturer | SKM50GD066ET |
Kategorie | IGBT Full Silicon |
Configuration: | Bridge 3f -SE(single emiter) |
Construction: | 6*(IGBT+D) |
Number of circuits (in case) | 6 ks |
Case type: | Modul |
Case [inch] : | SEMITOP-3 |
Type of material: | Si-Silicon |
Material Base | Ceramic |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 36 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 10 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 60 [A] |
Idc max (Tc/Ta=70÷79°C) | 50 [A] |
Uisol (@25°C/1min/50Hz) | 2500 [V] |
UF (maximum forward voltage) | 1.5 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 1.45 [V] |
tr (Turn-on / rise time) | 32 [ns] |
tf/tq (Turn-off / fall time) | 45 [ns] |
Qg (Total Gate Charge) | 250 [nC] |
Thermal and mechanical parameters:
Dimensions (L*W*H) [mm]: | 55x31x16 |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
L - Length | 55 [mm] |
W - Width | 31 [mm] |
H - Height | 15 [mm] |
Alternatives and replacements
Alternative products 1: | FS50R06W1E3 different package |
Alternative products 2: | FS50R06W1E3_B11 diff. package |