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SK35GD12T4ETE1
IGBT 1200V
No longer in stock
| ID Code: | 182131 |
| Manufacturer: | Semikron |
| Price: | on request |
| VAT: | 21 % |
| Total stock: | 0 pcs |
| Marking manufacturer: | SK35GD12T4ETE1 |
| Unit:: | pcs |
IGBT 1200V
Basic information:
| Marking manufacturer | SK35GD12T4ETE1 |
| Kategorie | IGBT Full Silicon |
| Configuration: | Bridge 3f -SE(single emiter) |
| Construction: | 6*(IGBT+D) |
| Number of circuits (in case) | 6 ks |
| Case type: | Modul |
| Case [inch] : | SEMITOP-E1 |
| Type of material: | Si-Silicon |
| RoHS | Yes |
| REACH | No |
| NOVINKA | A |
| RoHS1 | Ano |
Packaging and weight:
| Unit: | pcs |
| Weight: | 24 [g] |
| Type of packaging: | BOX |
| Small package (Number of units): | 10 |
Electro-physical parameters:
| IFAV / IC (Tc/Ta=25°C) | 43 [A] |
| Idc max (Tc/Ta=70÷79°C) | 35 [A] |
| Uisol (@25°C/1min/50Hz) | 2500 [V] |
| UF (maximum forward voltage) | 2.3 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
| UCE (sat) (@25°C) | 1.85 [V] |
| Cin (Input Capacitance) | 1950 [pF] |
Thermal and mechanical parameters:
| Tmin (minimum working temperature) | -40 [°C] |
| Tmax (maximum working temperature) | 175 [°C] |
| Rth-c (thermal resistance) | 1.2 [°C/W] ? Rth-c - definitions for different components Rth-c = Rthjc per whole case Rth-c - foil surface inch2 |