IGBT 1200V
ID Code: | 182131 |
Manufacturer: | Semikron |
Price: | on request |
VAT: | 21 % |
Total stock: | 0 pcs |
Marking manufacturer: | SK35GD12T4ETE1 |
Unit:: | pcs |
Marking manufacturer | SK35GD12T4ETE1 |
Kategorie | IGBT Full Silicon |
Configuration: | Bridge 3f -SE(single emiter) |
Construction: | 6*(IGBT+D) |
Number of circuits (in case) | 6 ks |
Case type: | Modul |
Case [inch] : | SEMITOP-E1 |
Type of material: | Si-Silicon |
RoHS | Yes |
REACH | No |
NOVINKA | A |
RoHS1 | Ano |
Unit: | pcs |
Weight: | 24 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 10 |
IFAV / IC (Tc/Ta=25°C) | 43 [A] |
Idc max (Tc/Ta=70÷79°C) | 35 [A] |
Uisol (@25°C/1min/50Hz) | 2500 [V] |
UF (maximum forward voltage) | 2.3 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 1.85 [V] |
Cin (Input Capacitance) | 1950 [pF] |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 175 [°C] |
Rth-c (thermal resistance) | 1.2 [°C/W] ? Rth-c - definitions for different components Rth-c = Rthjc per whole case Rth-c - foil surface inch2 |