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DPI1600P45C3616

Press-Pack IGBT + Diode 4500V/1600A

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DPI1600P45C3616 Dynex Semiconductor
DPI1600P45C3616 Dynex Semiconductor
DPI1600P45C3616 Dynex Semiconductor
DPI1600P45C3616 Dynex Semiconductor
No longer in stock
ID Code:182771
Manufacturer:Dynex Semiconductor
Price: on request
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DPI1600P45C3616
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
Press-Pack IGBT + Diode 4500V/1500A

Basic information:

Marking manufacturerDPI1600P45C3616 
KategorieIGBT Full Silicon 
Configuration:single 1*(T+D) 
Construction:1*(IGBT+D) 
Number of circuits (in case) 1 ks
Case type:PUK 
Case [inch] :PUK170/125x27T 
Type of material:Si-Silicon 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:3700 [g]
Type of packaging:BOX 
Small package (Number of units):

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)1600 [A]
Idc max (Tc/Ta=90÷99°C)1600 [A]
UF (maximum forward voltage)3.2 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.5 [V]
Pmax with heatsink (TC=25°C)15600 [W]
tr (Turn-on / rise time)490 [ns]
tf/tq (Turn-off / fall time)1900 [ns]
Qg (Total Gate Charge)26000 [nC]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rthjc1 IGBT0.006 [°C/W]
Rthjc2 Dioda, Tyristor0.014 [°C/W]
D - Outer diameter 170 [mm]
H - Height 27 [mm]
Fmin:50000 [N]
Fmax:70000 [N]

Alternatives and replacements

Alternative products 1:T1600GB45E 
Alternative products 2:5SNA 2000K451300 
Alternative products 3:T1600GB45G 

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