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DACMH 80N1200

Full SiC MOSFET 1200V / 50A Half Bridge

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DACMH 80N1200 Daco Semiconductor
DACMH 80N1200 Daco Semiconductor
DACMH 80N1200 Daco Semiconductor
pcs
ID Code:183089
Manufacturer:Daco Semiconductor
Price with VAT : 284,483807 €
Price without VAT : 235,110585 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DACMH80N1200
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 235,110585 €284,483808 €
3 + 232,148499 €280,899684 €
5 + 229,146919 €277,267772 €
10 + 227,646130 €275,451817 €
Full SiC MOSFET 1200V / 50A Half Bridge

Basic information:

Marking manufacturerDACMH80N1200 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD) 
Configuration:Half Bridge 1*(Phase Leg) 
Specification:SiC Enhancement Mode MOSF 
Construction:2*FET-BD 
Case type:Modul 
Case [inch] :HB-9434 
Type of material:SiC Full 
Material BaseNo Info 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:185 [g]
Type of packaging:BOX 
Small package (Number of units):12 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)50 [A]
Uisol (@25°C/1min/50Hz)3000 [V]
Pmax with heatsink (TC=25°C)460 [W]
Input Logic Level (UGS level)20V 
tr (Turn-on / rise time)29 [ns]
tf/tq (Turn-off / fall time)30 [ns]
Qg (Total Gate Charge)196 [nC]
Cin (Input Capacitance)3050 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:94x34x30 
Tmin (minimum working temperature)-50 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.26 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

L - Length 94 [mm]
W - Width 34 [mm]
H - Height 30 [mm]

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RoHS
All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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