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DAGNH 751200

Fast IGBT 1200V

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DAGNH 751200 Daco Semiconductor
DAGNH 751200 Daco Semiconductor
DAGNH 751200 Daco Semiconductor
DAGNH 751200 Daco Semiconductor
pcs
ID Code:183090
Manufacturer:Daco Semiconductor
Price with VAT : 80,330556 €
Price without VAT : 66,388889 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: DAGNH 751200
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 66,388889 €80,330556 €
4 + 63,055556 €76,297223 €
8 + 45,634921 €55,218254 €
64 + 39,444444 €47,727777 €
High Speed IGBT 1200V above 15kHz

Basic information:

Marking manufacturerDAGNH 751200 
KategorieIGBT Full Silicon 
Configuration:Half Bridge 1*(Phase Leg) 
Construction:2*(IGBT+D) 
Number of circuits (in case) 2 ks
Case type:Modul 
Case [inch] :HW-9434 
Type of material:Si-Silicon 
Material BaseCu 
RoHSYes 
REACHNo 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:167.7 [g]
Type of packaging:BOX 
Small package (Number of units):64 

Electro-physical parameters:

IFAV / IC (Tc/Ta=25°C)150 [A]
Idc max (Tc/Ta=80÷89°C)75 [A]
Uisol (@25°C/1min/50Hz)3600 [V]
UF (maximum forward voltage)2.3 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
UCE (sat) (@25°C)2.8 [V]
Pmax with heatsink (TC=25°C)350 [W]
trr recovery time (If=Inom.,@25°C)162 [ns]
tr (Turn-on / rise time)150 [ns]
tf/tq (Turn-off / fall time)50 [ns]
Cin (Input Capacitance)14000 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.36 [°C/W]
Rthjc2 Dioda, Tyristor0.55 [°C/W]
L - Length 94 [mm]
W - Width 34 [mm]
H - Height 30 [mm]

Alternatives and replacements

Alternative 1:181826 - SKM 75GB12F4 (SMK) 

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RoHS
All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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