High Speed IGBT 1200V above 15kHz
Basic information:
Marking manufacturer | DAGNH 751200 |
Kategorie | IGBT Full Silicon |
Configuration: | Half Bridge 1*(Phase Leg) |
Construction: | 2*(IGBT+D) |
Number of circuits (in case) | 2 ks |
Case type: | Modul |
Case [inch] : | HW-9434 |
Type of material: | Si-Silicon |
Material Base | Cu |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 167.7 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 64 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 150 [A] |
Idc max (Tc/Ta=80÷89°C) | 75 [A] |
Uisol (@25°C/1min/50Hz) | 3600 [V] |
UF (maximum forward voltage) | 2.3 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 2.8 [V] |
Pmax with heatsink (TC=25°C) | 350 [W] |
trr recovery time (If=Inom.,@25°C) | 162 [ns] |
tr (Turn-on / rise time) | 150 [ns] |
tf/tq (Turn-off / fall time) | 50 [ns] |
Cin (Input Capacitance) | 14000 [pF] |
Thermal and mechanical parameters:
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
Rthjc1 IGBT | 0.36 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.55 [°C/W] |
L - Length | 94 [mm] |
W - Width | 34 [mm] |
H - Height | 30 [mm] |
Alternatives and replacements
Alternative 1: | 181826 - SKM 75GB12F4 (SMK) |