IGBT 1200V
ID Code: | 183412 |
Manufacturer: | Dynex Semiconductor |
Price with VAT : | 200,477340 € |
Price without VAT : | 165,683752 € |
VAT: | 21 % |
Availability: | on request |
Total stock: | 0 pcs |
Marking manufacturer: | TG 450HF12M1-S3A00 |
Unit:: | pcs |
Overview of volume discounts | Quantity (pcs) | Price without VAT | Price with VAT | |
1 + | 165,683752 € | 200,477340 € | ||
3 + | 158,480111 € | 191,760934 € | ||
6 + | 144,072828 € | 174,328122 € | ||
12 + | 129,665545 € | 156,895309 € |
Marking manufacturer | TG 450HF12M1-S3A00 |
Kategorie | IGBT Full Silicon |
Configuration: | Half Bridge 1*(Phase Leg) |
Construction: | 2*(IGBT+D) |
Number of circuits (in case) | 2 ks |
Case type: | Modul |
Case [inch] : | SEMiX-3p |
Type of material: | Si-Silicon |
Material Base | Cu |
RoHS | Yes |
REACH | No |
NOVINKA | N |
RoHS1 | Ano |
Unit: | pcs |
Weight: | 450 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 10 |
IFAV / IC (Tc/Ta=25°C) | 450 [A] |
Idc max (Tc/Ta=100÷109°C) | 450 [A] |
Uisol (@25°C/1min/50Hz) | 2500 [V] |
UF (maximum forward voltage) | 1.65 [VDC] ? Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 1.65 [V] |
I2t (TC/TA=25°C) | 4600 [A2s] |
Pmax with heatsink (TC=25°C) | 2800 [W] |
tr (Turn-on / rise time) | 70 [ns] |
tf/tq (Turn-off / fall time) | 260 [ns] |
Qg (Total Gate Charge) | 4600 [nC] |
Cin (Input Capacitance) | 62000 [pF] |
Dimensions (L*W*H) [mm]: | 150x62x21 |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 150 [°C] |
Rthjc1 IGBT | 0.052 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.086 [°C/W] |
L - Length | 150 [mm] |
W - Width | 62 [mm] |
H - Height | 21 [mm] |
Alternative 1: | 185021 - DIM 450M1HS12-PB500 (DYN) |