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S1109SXU50

Flat Base Rectifier Diode 5000V/470A, Anoda Base

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S1109SXU50 Dynex Semiconductor
S1109SXU50 Dynex Semiconductor
pcs
ID Code:183622
Manufacturer:Dynex Semiconductor
Price with VAT : 4 605,9429 €
Price without VAT : 3 806,5644 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: S1109SXU50
Central warehouse Zdice: 0 pcs
External warehouse KV (delivery time 5÷10 days): 0 pcs
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 3 806,5644 €4 605,9429 €
2 + 3 711,4003 €4 490,7943 €
Flat Base Rectifier Diode 5000V/470A Anoda Base

Basic information:

Marking manufacturerS1109SXU50 
Type of casing:PUK 
Case:!_puk-fletbase_! 
KategorieDiode Standard Disc 
Type of component:!_diode standard_! 
Configuration:1xDiode 
RoHSYes 
REACHno 
NOVINKA

Electrical parameters:

Udc (URRM, UCEO, Umax) 5000 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)470 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=100÷109°C)470 [A]
UF (maximum forward voltage)2.1 [VDC] ?
Test conditions:
Ta=25°C, IF=In/Imax
IR (reverse current)50000 [µA]
I2t (TC/TA=25°C)441 [1000*A2s]

Material, color, design:

Type of material:!_si-silicon_! 

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)150 [°C]
Rth-c (thermal resistance) 0.065 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Dimensions:

Gap (by product number) 999.99 [mm]
Dimensions of outlets0.00 [mm]

Packaging and weight:

Unit:pcs 
Weight:810 [g]
Packaging (Number of units):

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