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ACR2900VR45

Bypass Thyristor 4500V/2900A for the protection of IGBT modules in VSC multi-level applications

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ACR2900VR45 Dynex Semiconductor
ACR2900VR45 Dynex Semiconductor
pcs
ID Code:183763
Manufacturer:Dynex Semiconductor
Price with VAT : 921,1886 €
Price without VAT : 761,3129 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: ACR2900VR45
Unit:: pcs
quantity discounts
QuantityPrice without VATPrice with VAT
1 + 761,3129 €921,1886 €
6 + 742,2801 €898,1589 €
The Dynex Bypass Thyristor range of devices is specially designed for the protection of IGBT modules in Voltage Source Converter multi-level applications, where a reduced forward blocking voltage is required. Very Low Cosmic Ray FIT Rating, High Surge Capability, High dv/dt Rating
The primary characteristic of the bypass thyristor which determines current diversion from the IGBT diode is dynamic on-state voltage, with overall turn-on time a secondary influence. Highly optimised, Low FIT, low Vt, 3.3kV and 4.5kV bypass thyristor devices have been produced for VSC protection.
Voltage Source Converter (VSC) technology provides a number of advantages over traditional (LCC) HVDC including self-commutation, small footprint, and black start capability and is becoming increasingly popular in applications such as offshore wind.With higher voltage systems, where the current handling capability of the IGBT diode is reduced, effective current diversion becomes essential.

Basic information:

Marking manufacturerACR2900VR45 
Type of casing:PUK 
Case:!_puk110/73x27t_! 
KategorieTrisil-Overvoltage Protection 
Type of component:TRISIL 
Configuration:1xThyristor 
RoHSYes 
REACHno 
NOVINKA

Electrical parameters:

Udc (URRM, UCEO, Umax) 4500 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)2900 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=60÷69°C)2900 [A]
du/dt (critical rate of rise of on-state voltage)10000 [V/µs]
di/dt (critical rate of rise of on-state current)400 [A/µs]
I2t (TC/TA=25°C)7600 [1000*A2s]
tf/tq (Turn-off / fall time)3000 [ns]

Material, color, design:

Type of material:!_si-silicon_! 

Thermal and mechanical parameters:

Tmin (minimum working temperature)-40 [°C]
Tmax (maximum working temperature)125 [°C]
Rth-c (thermal resistance) 0.00746 [°C/W] ?

Rth-c - definitions for different components


Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Fmin:48000 [N]
Fmax:59000 [N]

Dimensions:

Dimensions of outlets0.00 [mm]

Packaging and weight:

Unit:pcs 
Weight:1100 [g]
Packaging (Number of units):

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