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SiC MOSFET 1700V; 84A; 449W; SOT-227; TUBE

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G3R20MT17N GeneSiC Semiconductor
G3R20MT17N GeneSiC Semiconductor
G3R20MT17N GeneSiC Semiconductor
ID Code:232099
Manufacturer:GeneSiC Semiconductor
Price with VAT : 152,935701 €
Price without VAT : 126,393141 €
VAT:21 %
Availability:on request
Total stock:0 pcs
Marking manufacturer: G3R20MT17N
Central warehouse Zdice: 0 pcs
Unit:: pcs
Overview of volume discounts
Quantity (pcs)Price without VATPrice with VAT
1 + 126,393141 €152,935701 €
15 + 125,331700 €151,651357 €
30 + 124,270259 €150,367014 €
75 + 123,208818 €149,082670 €

Basic information:

Marking manufacturerG3R20MT17N 
Type of component:SiC MOSFET Tranzistor 
KategorieFull SiC (MOS-BD) 
Configuration:single 1*(T-BD) 
Specification:SiC Enhancement Mode MOSF 
Case type:Modul 
Case [inch] :SOT-227 
Type of material:SiC Full 
Material BaseNo Info 

Packaging and weight:

Weight:185 [g]
Type of packaging:TUBE 
Small package (Number of units):150 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1700 [V] ?

Udc - definitions for components

Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=100÷109°C)60 [A]
Pmax with heatsink (TC=25°C)449 [W]
tr (Turn-on / rise time)34 [ns]
tf/tq (Turn-off / fall time)25 [ns]
Qg (Total Gate Charge)256 [nC]
Cin (Input Capacitance)7620 [pF]

Thermal and mechanical parameters:

Dimensions (L*W*H) [mm]:94x34x30 
Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)175 [°C]
Rth-c (thermal resistance) 0.26 [°C/W] ?

Rth-c - definitions for different components

Rth-c = Rthjc per whole case

Rth-c - foil surface inch2

Rthjc1 IGBT0.27 [°C/W]
Number of Pins
L - Length 94 [mm]
W - Width 34 [mm]
H - Height 30 [mm]

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All prices are mentioned exclusive VAT and do not include transport costs. Transport costs will be added to the order as a separate item.

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